Nanya Technology M2Y51264TU88B0B-3C 512MB vs Kingston KHX3200C18D4/4G 4GB

总分

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分

Kingston KHX3200C18D4/4G 4GB

Kingston KHX3200C18D4/4G 4GB

差异规格评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB

报告一个错误

低于PassMark测试中的延时，ns

54 56

左右 4% 更低的延时
更快的读取速度，GB/s

3 17.9

测试中的平均数值

Kingston KHX3200C18D4/4G 4GB

需要考虑的原因
Kingston KHX3200C18D4/4G 4GB

报告一个错误

更快的写入速度，GB/s

9.4 1,308.1

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88B0B-3C 512MB

Kingston KHX3200C18D4/4G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 56
读取速度，GB/s

3,573.5 17.9
写入速度，GB/s

1,308.1 9.4
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

371 2071

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMD32GX4M4C3200C16 8GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

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A Force Manufacturing Ltd. UD-01G64V2133P 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-2666

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SK Hynix HMT351S6EFR8A-PB 4GB

G Skill Intl F3-1600C9-4GRSL 4GB

G Skill Intl F3-1600C9-4GRSL 4GB