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Nanya Technology NT1GT64U88D0BY-AD 1GB
A-DATA Technology DDR4 2666 2OZ 4GB

Nanya Technology NT1GT64U88D0BY-AD 1GB vs A-DATA Technology DDR4 2666 2OZ 4GB

总分
star star star star star
Nanya Technology NT1GT64U88D0BY-AD 1GB

Nanya Technology NT1GT64U88D0BY-AD 1GB

总分
star star star star star
A-DATA Technology DDR4 2666 2OZ 4GB

A-DATA Technology DDR4 2666 2OZ 4GB

差异 规格 评论

差异

Nanya Technology NT1GT64U88D0BY-AD 1GB 需要考虑的原因
Nanya Technology NT1GT64U88D0BY-AD 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,636.8 left arrow 12.3
    测试中的平均数值
A-DATA Technology DDR4 2666 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR4 2666 2OZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 68
    左右 -127% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT1GT64U88D0BY-AD 1GB
A-DATA Technology DDR4 2666 2OZ 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    68 left arrow 30
  • 读取速度，GB/s
    4,540.8 left arrow 16.7
  • 写入速度，GB/s
    2,636.8 left arrow 12.3
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    827 left arrow 3106

Nanya Technology NT1GT64U88D0BY-AD 1GB RAM的比较

SK Hynix HYMP125U72CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125U72CP8-Y5 2GB

A-DATA Technology DDR4 2666 2OZ 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT1GT64U88D0BY-AD 1GB
Nanya Technology NT1GT64U88D0BY-AD 1GB
A-DATA Technology DDR4 2666 2OZ 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
内存RAM
Golden Empire 2GB DDR2 800 CAS=4 2GB
Golden Empire 2GB DDR2 800 CAS=4 2GB
Mushkin MRA4S320GJJM16G 16GB
Mushkin MRA4S320GJJM16G 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Kingston 99U5702-095.A00G 8GB
Kingston 99U5702-095.A00G 8GB
内存RAM
Kingston 9905402-665.A00LF 4GB
Kingston 9905402-665.A00LF 4GB
A-DATA Technology AD4U240038G17-BHYA 8GB
A-DATA Technology AD4U240038G17-BHYA 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Corsair CMSO32GX4M2A2133C15 16GB
Corsair CMSO32GX4M2A2133C15 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
A-DATA Technology AM1P26KC4U1-BACS 4GB
内存RAM
Kingston 99P5471-002.A00LF 2GB
Kingston 99P5471-002.A00LF 2GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Golden Empire CL18-22-22 D4-3600 16GB
Golden Empire CL18-22-22 D4-3600 16GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Corsair CMK8GX4M2B3600C18 4GB
Corsair CMK8GX4M2B3600C18 4GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Crucial Technology BLE8G4D32BEEAK.K8FB 8GB
Crucial Technology BLE8G4D32BEEAK.K8FB 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9905622-024.A00G 4GB
Kingston 9905622-024.A00G 4GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
SK Hynix HMA81GR7AFR8N-UH 8GB
SK Hynix HMA81GR7AFR8N-UH 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CMK32GX4M4B3733C17 8GB
Corsair CMK32GX4M4B3733C17 8GB
内存RAM