Nanya Technology NT2GC64B8HC0NS-CG 2GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB vs Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

总分

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

总分

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

差异规格评论

差异

Nanya Technology NT2GC64B8HC0NS-CG 2GB

需要考虑的原因
Nanya Technology NT2GC64B8HC0NS-CG 2GB

报告一个错误

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 28

左右 -22% 更低的延时
更快的读取速度，GB/s

17 11.7

测试中的平均数值
更快的写入速度，GB/s

12.9 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 23
读取速度，GB/s

11.7 17.0
写入速度，GB/s

8.4 12.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1578 2938

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Crucial Technology CT8G4DFD824A.C16FDR2 8GB

Crucial Technology CT8G4DFD824A.C16FDR2 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Corsair CMK16GX4M2D3200C16 8GB

Corsair CMK16GX4M2D3200C16 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-4000C17-16GTRSB 16GB

G Skill Intl F4-4000C17-16GTRSB 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology BL16G32C16U4R.M16FE 16GB

Crucial Technology BL16G32C16U4R.M16FE 16GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

A-DATA Technology AO1P24HC4N2-BWCS 4GB

A-DATA Technology AO1P24HC4N2-BWCS 4GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Crucial Technology BLE4G4D32AEEA.K8FD 4GB

Crucial Technology BLE4G4D32AEEA.K8FD 4GB

Samsung M378B1G73EB0-CK0 8GB

Samsung M378B1G73EB0-CK0 8GB

Transcend Information JM2666HSE-16G 16GB

Transcend Information JM2666HSE-16G 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMH16GX4M2E3200C16 8GB

Corsair CMH16GX4M2E3200C16 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

G Skill Intl F4-2133C15-8GRB 8GB

G Skill Intl F4-2133C15-8GRB 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

G Skill Intl F4-3733C17-8GTZKK 8GB

G Skill Intl F4-3733C17-8GTZKK 8GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Kingston ACR32D4S2S8ME-16 16GB

Kingston ACR32D4S2S8ME-16 16GB