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Nanya Technology NT2GT64U8HD0BY-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    64 left arrow 122
    左右 48% 更低的延时
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
报告一个错误
  • 更快的读取速度，GB/s
    9.4 left arrow 4
    测试中的平均数值
  • 更快的写入速度，GB/s
    5.8 left arrow 2,256.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    64 left arrow 122
  • 读取速度，GB/s
    4,651.3 left arrow 9.4
  • 写入速度，GB/s
    2,256.8 left arrow 5.8
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    837 left arrow 1411

Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM的比较

G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB

Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB RAM的比较

A-DATA Technology AD73I1C1674EV 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
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Kingston ACR16D3LS1NGG/2G 2GB
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Corsair CMT32GX4M4C3000C15 8GB
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Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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Samsung M471A2K43CB1-CRC 16GB
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Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
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Kingston HP26D4U9S1ME-4 4GB
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SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
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Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB
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Kingston 99P5474-014.A00LF 4GB
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Apacer Technology 78.CAGPW.40C0B 8GB
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Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
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Kingston KF2666C16S4/16G 16GB
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Kingston 9905403-156.A00LF 2GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Corsair CMT32GX4M2C3600C18 16GB
Corsair CMT32GX4M2C3600C18 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-2400C15-4GRR 4GB
G Skill Intl F4-2400C15-4GRR 4GB
内存RAM
TwinMOS 9DNPBNZB-TATP 4GB
TwinMOS 9DNPBNZB-TATP 4GB
Kingston KTD3KX-HYA 8GB
Kingston KTD3KX-HYA 8GB
内存RAM
Kingston HX426C16FB2/8-SP 8GB
Kingston HX426C16FB2/8-SP 8GB
G Skill Intl F4-3000C16-16GTRG 16GB
G Skill Intl F4-3000C16-16GTRG 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMT32GX4M2K4000C19 16GB
Corsair CMT32GX4M2K4000C19 16GB
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