Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Micron Technology 9ASF51272PZ-2G1B1 4GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

Micron Technology 9ASF51272PZ-2G1B1 4GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

Micron Technology 9ASF51272PZ-2G1B1 4GB

需要考虑的原因
Micron Technology 9ASF51272PZ-2G1B1 4GB

报告一个错误

低于PassMark测试中的延时，ns

51 64

左右 -25% 更低的延时
更快的读取速度，GB/s

9.6 4

测试中的平均数值
更快的写入速度，GB/s

7.8 2,256.8

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 51
读取速度，GB/s

4,651.3 9.6
写入速度，GB/s

2,256.8 7.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

837 2248

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Good Wealth Technology Ltd. KETECH 8GB

Good Wealth Technology Ltd. KETECH 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-3000C16-16GSXWB 16GB

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Crucial Technology CT8G4DFS8266.C8FE 8GB

Crucial Technology CT8G4DFS8266.C8FE 8GB