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Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3600C14-16GTRG 16GB
比较
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs G Skill Intl F4-3600C14-16GTRG 16GB
总分
Nanya Technology NT4GC64B8HG0NS-CG 4GB
总分
G Skill Intl F4-3600C14-16GTRG 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3600C14-16GTRG 16GB
报告一个错误
低于PassMark测试中的延时,ns
23
42
左右 -83% 更低的延时
更快的读取速度,GB/s
20.1
9.7
测试中的平均数值
更快的写入速度,GB/s
19.7
6.0
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3600C14-16GTRG 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
23
读取速度,GB/s
9.7
20.1
写入速度,GB/s
6.0
19.7
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1396
4322
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
G Skill Intl F4-3600C14-16GTRG 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix DDR2 800 2G 2GB
Crucial Technology BLE4G4D32AEEA.K8FD 4GB
Kingston 9905403-444.A00LF 4GB
A-DATA Technology AD4S320038G22-B 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Essencore Limited IM48GU88N21-FFFHM 8GB
SK Hynix HYMP112S64CP6-S6 1GB
G Skill Intl F4-2400C17-16GIS 16GB
SK Hynix HYMP112U64CP8-Y5 1GB
Crucial Technology CT8G4SFD824A.C16FHP 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
Kingston 9905403-444.A00LF 4GB
Corsair CMR16GX4M2C3466C16 8GB
SK Hynix HMT351S6CFR8C-PB 4GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
Kingston K1N7HK-ELC 2GB
A-DATA Technology DDR4 3600 2OZ 8GB
Kingston 99U5428-040.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
Samsung M393B5170FH0-CK0 4GB
Samsung M471A1K43DB1-CWE 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
G Skill Intl F4-3466C16-8GTZSW 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
Samsung M3 78T5663RZ3-CE6 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
报告一个错误
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Bug description
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