Samsung M393B1K70CH0-CH9 8GB vs Crucial Technology BLS16G4D32AESE.M16FE 16GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Crucial Technology BLS16G4D32AESE.M16FE 16GB

Crucial Technology BLS16G4D32AESE.M16FE 16GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Crucial Technology BLS16G4D32AESE.M16FE 16GB

需要考虑的原因
Crucial Technology BLS16G4D32AESE.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 44

左右 -69% 更低的延时
更快的读取速度，GB/s

18.9 11.2

测试中的平均数值
更快的写入速度，GB/s

16.2 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology BLS16G4D32AESE.M16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 26
读取速度，GB/s

11.2 18.9
写入速度，GB/s

8.1 16.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2293 3857

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF4G64AZ-2G6B1 32GB

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AMD AE34G2139U2 4GB

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Kingston 9905471-001.A01LF 2GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

G Skill Intl F4-2400C15-8GVS 8GB

G Skill Intl F4-2400C15-8GVS 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-3600C19-8GVRB 8GB

G Skill Intl F4-3600C19-8GVRB 8GB

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G Skill Intl F5-6400J3239G16G 16GB

Apacer Technology 78.CAGRN.40C0B 8GB

Apacer Technology 78.CAGRN.40C0B 8GB