Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Kingston KMKYF9-MID 8GB

总分

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分

Kingston KMKYF9-MID 8GB

Kingston KMKYF9-MID 8GB

差异规格评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB

需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB

报告一个错误

Kingston KMKYF9-MID 8GB

需要考虑的原因
Kingston KMKYF9-MID 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 42

左右 -20% 更低的延时
更快的读取速度，GB/s

15 10.6

测试中的平均数值
更快的写入速度，GB/s

11.2 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Kingston KMKYF9-MID 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 35
读取速度，GB/s

10.6 15.0
写入速度，GB/s

7.8 11.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2150 2627

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KMKYF9-MID 8GB

Kingston KMKYF9-MID 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Micron Technology 16ATF2G64AZ-3G2E1 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Mushkin MR[ABC]4U320GJJM8G 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

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Kingston 9905598-025.A00G 8GB

SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

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Corsair CMK16GX4M2D3600C18 8GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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G Skill Intl F4-4000C17-16GTRGB 16GB