Nanya Technology NT512T64U88B0BY-3C 512MB vs A-DATA Technology AD4U240038G17-BHYA 8GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

A-DATA Technology AD4U240038G17-BHYA 8GB

A-DATA Technology AD4U240038G17-BHYA 8GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

更快的读取速度，GB/s

2 14.4

测试中的平均数值

A-DATA Technology AD4U240038G17-BHYA 8GB

需要考虑的原因
A-DATA Technology AD4U240038G17-BHYA 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 71

左右 -209% 更低的延时
更快的写入速度，GB/s

9.0 1,322.6

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

A-DATA Technology AD4U240038G17-BHYA 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 23
读取速度，GB/s

2,831.6 14.4
写入速度，GB/s

1,322.6 9.0
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

399 2408

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9965667-001.A00G 16GB

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Kingston HX318C10FK/4 4GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Samsung 1600 CL10 Series 8GB

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Kingston KHX2666C16/16G 16GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Samsung M378A1K43DB2-CTD 8GB

Samsung M378A1K43DB2-CTD 8GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

Corsair CMK64GX4M2D3600C18 32GB

Corsair CMK64GX4M2D3600C18 32GB