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Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMD64GX4M4A2400C14 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB vs Corsair CMD64GX4M4A2400C14 16GB

总分
star star star star star
Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分
star star star star star
Corsair CMD64GX4M4A2400C14 16GB

Corsair CMD64GX4M4A2400C14 16GB

差异 规格 评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB 需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15.3
    测试中的平均数值
Corsair CMD64GX4M4A2400C14 16GB 需要考虑的原因
Corsair CMD64GX4M4A2400C14 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 71
    左右 -173% 更低的延时
  • 更快的写入速度，GB/s
    11.2 left arrow 1,322.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMD64GX4M4A2400C14 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    71 left arrow 26
  • 读取速度，GB/s
    2,831.6 left arrow 15.3
  • 写入速度，GB/s
    1,322.6 left arrow 11.2
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    399 left arrow 2987

Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB

Corsair CMD64GX4M4A2400C14 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD8GX3M2A2933C12 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-2666C12-8GTXD 8GB
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内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMD64GX4M4A2400C14 16GB
Corsair CMD64GX4M4A2400C14 16GB
内存RAM
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Mushkin MR[A/B]4U266GHHF16G 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
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Transcend Information JM2666HLE-16G 16GB
内存RAM
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Samsung M4 70T2864QZ3-CF7 1GB
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Samsung DDR3 8GB 1600MHz 8GB
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Crucial Technology CT16G4SFD824A.M16FA 16GB
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Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
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Wilk Elektronik S.A. IR2400D464L15S/4G 4GB
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A-DATA Technology AO1P26KC8T1-BPXS 8GB
A-DATA Technology AO1P26KC8T1-BPXS 8GB
内存RAM
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G Skill Intl F4-4000C18-16GTRS 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
内存RAM
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Samsung M393B2G70BH0-CH9 16GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
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Kingmax Semiconductor GZNG43F-18---------- 8GB
内存RAM
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Kingston 9965525-144.A00LF 8GB
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Avant Technology W6451U66J9266ND 4GB
内存RAM
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Team Group Inc. Vulcan-1600 4GB
Kingston KTP9W1-MIE 16GB
Kingston KTP9W1-MIE 16GB
内存RAM