Nanya Technology NT512T64U88B0BY-3C 512MB vs Corsair CMW32GX4M2C3333C16 16GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

Corsair CMW32GX4M2C3333C16 16GB

Corsair CMW32GX4M2C3333C16 16GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

Corsair CMW32GX4M2C3333C16 16GB

需要考虑的原因
Corsair CMW32GX4M2C3333C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 71

左右 -209% 更低的延时
更快的读取速度，GB/s

20.4 2

测试中的平均数值
更快的写入速度，GB/s

17.4 1,322.6

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

Corsair CMW32GX4M2C3333C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 23
读取速度，GB/s

2,831.6 20.4
写入速度，GB/s

1,322.6 17.4
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

399 4214

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Micron Technology 8ATF1G64HZ-2G6D1 8GB

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Samsung M391B5673EH1-CH9 2GB

Corsair CMK16GX4M1C3000C16 16GB

Corsair CMK16GX4M1C3000C16 16GB

Corsair CML16GX3M2A1600C10 8GB

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Kingston KHX3200C16D4/4GX 4GB

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Samsung M474A4G43MB1-CTD 32GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

SK Hynix HMA425S6BJR6N-UH 2GB

SK Hynix HMA425S6BJR6N-UH 2GB