RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology BLS8G4D30AESCK.M8FE 8GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs Crucial Technology BLS8G4D30AESCK.M8FE 8GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
Crucial Technology BLS8G4D30AESCK.M8FE 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
更快的读取速度,GB/s
2
18.1
测试中的平均数值
需要考虑的原因
Crucial Technology BLS8G4D30AESCK.M8FE 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
71
左右 -163% 更低的延时
更快的写入速度,GB/s
14.3
1,322.6
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology BLS8G4D30AESCK.M8FE 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
27
读取速度,GB/s
2,831.6
18.1
写入速度,GB/s
1,322.6
14.3
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
399
3418
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Crucial Technology BLS8G4D30AESCK.M8FE 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M471B5273EB0-CK0 4GB
Kingston MSI21D4S15HAG/8G 8GB
AMD R748G2133U2S 8GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
SpecTek Incorporated ?????????????????? 2GB
Corsair CMK16GX4M1Z3600C18 16GB
Kingston 99P5471-002.A00LF 2GB
G Skill Intl F4-3333C16-8GTZKW 8GB
SK Hynix HMT451S6DFR8A-PB 4GB
Kingston 9905701-003.A00G 16GB
Corsair CMZ16GX3M2A1866C9 8GB
G Skill Intl F4-3466C16-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C17-16GTZKW 16GB
Corsair CMV4GX3M1B1600C11 4GB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology CT8G4DFD8213.C16FA11 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Avant Technology J642GU42J9266N2 16GB
Kingston KHX1600C9D3/8G 8GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston 9965589-026.D00G 8GB
Samsung M393B2G70BH0-CK0 16GB
Golden Empire CL16-18-18 D4-2666 8GB
Kingston 9905316-106.A02LF 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
报告一个错误
×
Bug description
Source link