Nanya Technology NT512T64U88B0BY-3C 512MB vs Eudar Technology Inc. 8GXMP3000CL16 8GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

Eudar Technology Inc. 8GXMP3000CL16 8GB

Eudar Technology Inc. 8GXMP3000CL16 8GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

低于PassMark测试中的延时，ns

71 73

左右 3% 更低的延时
更快的读取速度，GB/s

2 14.7

测试中的平均数值

Eudar Technology Inc. 8GXMP3000CL16 8GB

需要考虑的原因
Eudar Technology Inc. 8GXMP3000CL16 8GB

报告一个错误

更快的写入速度，GB/s

8.5 1,322.6

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

Eudar Technology Inc. 8GXMP3000CL16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 73
读取速度，GB/s

2,831.6 14.7
写入速度，GB/s

1,322.6 8.5
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

399 1712

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM4B16G1L3200K18K2 16GB

Corsair CM4B16G1L3200K18K2 16GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

Panram International Corporation PUD43000C168G2NJR 8GB

Panram International Corporation PUD43000C168G2NJR 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Samsung M393A5143DB0-CPB 4GB

Samsung M393A5143DB0-CPB 4GB