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Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-2133C15-4GRR 4GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs G Skill Intl F4-2133C15-4GRR 4GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
G Skill Intl F4-2133C15-4GRR 4GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
更快的读取速度,GB/s
2
14.7
测试中的平均数值
需要考虑的原因
G Skill Intl F4-2133C15-4GRR 4GB
报告一个错误
低于PassMark测试中的延时,ns
36
71
左右 -97% 更低的延时
更快的写入速度,GB/s
10.9
1,322.6
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-2133C15-4GRR 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
36
读取速度,GB/s
2,831.6
14.7
写入速度,GB/s
1,322.6
10.9
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
399
2570
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
G Skill Intl F4-2133C15-4GRR 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD8GX3M2A2933C12 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-2133C15-4GRR 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology BLS8G4D32AESCK.M8FE 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-2400C15-8GIS 8GB
Crucial Technology RM51264BA1339.16FR 4GB
Corsair CMN32GX4M2Z3600C18 16GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3200C14-8GTZSK 8GB
Samsung M378A1K43EB2-CWE 8GB
Micron Technology 8ATF1G64AZ-2G3B1 8GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3000C15-8GRK 8GB
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-2800C14-16GTZ 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Panram International Corporation PUD42400C154G4NJK 4GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905625-011.A00G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA84GR7JJR4N-VK 32GB
SK Hynix HMT41GU7BFR8A-PB 8GB
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
报告一个错误
×
Bug description
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