Nanya Technology NT512T64U88B0BY-3C 512MB vs G Skill Intl F4-3200C16-8GRKB 8GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

G Skill Intl F4-3200C16-8GRKB 8GB

G Skill Intl F4-3200C16-8GRKB 8GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

更快的读取速度，GB/s

2 19.9

测试中的平均数值

G Skill Intl F4-3200C16-8GRKB 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GRKB 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 71

左右 -274% 更低的延时
更快的写入速度，GB/s

15.0 1,322.6

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

G Skill Intl F4-3200C16-8GRKB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 19
读取速度，GB/s

2,831.6 19.9
写入速度，GB/s

1,322.6 15.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

399 3359

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

G Skill Intl F4-3200C16-8GRKB 8GB

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Kingston 99U5469-045.A00LF 4GB

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Chun Well Technology Holding Limited CL16-18-18 D4-2666

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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A-DATA Technology AD4U240038G17-BHYA 8GB

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Nanya Technology M2F4G64CB8HG4N-CG 4GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

Team Group Inc. TEANGROUP-UD4-2400 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

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SK Hynix HMT425S6CFR6A-PB 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N