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Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-4133C19-4GTZ 4GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs G Skill Intl F4-4133C19-4GTZ 4GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
G Skill Intl F4-4133C19-4GTZ 4GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
更快的读取速度,GB/s
2
19.5
测试中的平均数值
需要考虑的原因
G Skill Intl F4-4133C19-4GTZ 4GB
报告一个错误
低于PassMark测试中的延时,ns
19
71
左右 -274% 更低的延时
更快的写入速度,GB/s
14.9
1,322.6
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-4133C19-4GTZ 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
19
读取速度,GB/s
2,831.6
19.5
写入速度,GB/s
1,322.6
14.9
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
399
3355
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
G Skill Intl F4-4133C19-4GTZ 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-4133C19-4GTZ 4GB
Kingston 9905403-444.A00LF 4GB
SK Hynix HMA82GU6CJR8N-VK 16GB
Mushkin 991988 (996988) 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Samsung M471B5173DB0-YK0 4GB
Terabyte Co Ltd RCX2-16G3600A 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston 9905678-110.A00G 8GB
Crucial Technology CT102464BF160B.16F 8GB
Chun Well Technology Holding Limited D4U0832160B 8GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-3000C16-8GTZN 8GB
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 8ATF1G64AZ-2G3E1 8GB
Corsair CMZ16GX3M2A1600C10 8GB
Kingston 9905743-043.A00G 16GB
Samsung M378B5773CH0-CH9 2GB
Wilk Elektronik S.A. GY2400D464L15S/8G 8GB
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-3200C16-8GVS 8GB
Samsung M3 93T5750CZA-CE6 2GB
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
Qimonda 64T128020EDL2.5C2 1GB
Micron Technology 8ATF2G64AZ-3G2B1 16GB
SK Hynix HMT451S6BFR8A-PB 4GB
A-DATA Technology DDR4 3000 2OZ 8GB
报告一个错误
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Bug description
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