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Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston 9905702-019.A00G 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB vs Kingston 9905702-019.A00G 8GB

总分
star star star star star
Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分
star star star star star
Kingston 9905702-019.A00G 8GB

Kingston 9905702-019.A00G 8GB

差异 规格 评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB 需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
  • 低于PassMark测试中的延时，ns
    71 left arrow 87
    左右 18% 更低的延时
  • 更快的读取速度，GB/s
    2 left arrow 12.6
    测试中的平均数值
Kingston 9905702-019.A00G 8GB 需要考虑的原因
Kingston 9905702-019.A00G 8GB
报告一个错误
  • 更快的写入速度，GB/s
    9.8 left arrow 1,322.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston 9905702-019.A00G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    71 left arrow 87
  • 读取速度，GB/s
    2,831.6 left arrow 12.6
  • 写入速度，GB/s
    1,322.6 left arrow 9.8
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    399 left arrow 1849

Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB

Kingston 9905702-019.A00G 8GB RAM的比较

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston 9905702-019.A00G 8GB
Kingston 9905702-019.A00G 8GB
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Samsung M3 93T5750CZA-CE6 2GB
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Kingston 9905471-006.A01LF 4GB
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Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
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Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
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Samsung M391B5673EH1-CH9 2GB
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Crucial Technology CT16G4DFD8213.C16FDD 16GB
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内存RAM
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Samsung 1600 CL10 Series 8GB
G Skill Intl F4-3866C18-16GTZR 16GB
G Skill Intl F4-3866C18-16GTZR 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
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Corsair CMW8GX4M1Z3600C18 8GB
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内存RAM
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