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Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston KHX3466C19D4/8G 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB vs Kingston KHX3466C19D4/8G 8GB

总分
star star star star star
Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分
star star star star star
Kingston KHX3466C19D4/8G 8GB

Kingston KHX3466C19D4/8G 8GB

差异 规格 评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB 需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 18.5
    测试中的平均数值
Kingston KHX3466C19D4/8G 8GB 需要考虑的原因
Kingston KHX3466C19D4/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 71
    左右 -163% 更低的延时
  • 更快的写入速度，GB/s
    15.8 left arrow 1,322.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    27700 left arrow 5300
    左右 5.23 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston KHX3466C19D4/8G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    71 left arrow 27
  • 读取速度，GB/s
    2,831.6 left arrow 18.5
  • 写入速度，GB/s
    1,322.6 left arrow 15.8
  • 内存带宽，mbps
    5300 left arrow 27700
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-27700, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow no data
  • 排名PassMark (越多越好)
    399 left arrow 3539

Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB

Kingston KHX3466C19D4/8G 8GB RAM的比较

Corsair CM5S16GM4800A40K2 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston KHX318C10FR/8G 8GB
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Crucial Technology CT8G4SFS824A.C8FDD1 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
Crucial Technology BLS8G4D26BFSEK.8FBD 8GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston KHX3466C19D4/8G 8GB
Kingston KHX3466C19D4/8G 8GB
内存RAM
Kingston 99U5428-046.A00LF 4GB
Kingston 99U5428-046.A00LF 4GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
内存RAM
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Kingston 99U5403-124.A00LF 8GB
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Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
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Crucial Technology CT16G4SFD8266.C16FN 16GB
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内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
AMD R744G2400U1S-UO 4GB
AMD R744G2400U1S-UO 4GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-4000C14-8GTZR 8GB
G Skill Intl F4-4000C14-8GTZR 8GB
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G Skill Intl F4-4000C15-8GTZR 8GB
内存RAM
G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F3-14900CL9-4GBSR 4GB
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SK Hynix HMA84GR7AFR4N-VK 32GB
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