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Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston XCCT36-MIE 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB vs Kingston XCCT36-MIE 16GB

总分
star star star star star
Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分
star star star star star
Kingston XCCT36-MIE 16GB

Kingston XCCT36-MIE 16GB

差异 规格 评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB 需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 17.9
    测试中的平均数值
Kingston XCCT36-MIE 16GB 需要考虑的原因
Kingston XCCT36-MIE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 71
    左右 -154% 更低的延时
  • 更快的写入速度，GB/s
    16.9 left arrow 1,322.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston XCCT36-MIE 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    71 left arrow 28
  • 读取速度，GB/s
    2,831.6 left arrow 17.9
  • 写入速度，GB/s
    1,322.6 left arrow 16.9
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    399 left arrow 3795

Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB

Kingston XCCT36-MIE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F3-1866C8-8GTX 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston XCCT36-MIE 16GB
Kingston XCCT36-MIE 16GB
内存RAM
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A-DATA Technology AM1P26KC8T1-BAAS 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMR16GX4M2D3000C16 8GB
Corsair CMR16GX4M2D3000C16 8GB
内存RAM
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Kingston ACR256X64D3S1333C9 2GB
Ramaxel Technology RMSA3320MJ78HAF-3200 8GB
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Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
AMD R748G2606U2S 8GB
AMD R748G2606U2S 8GB
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Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
SK Hynix HMA851S6CJR6N-XN 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Samsung M471A2K43BB1-CPB 16GB
Samsung M471A2K43BB1-CPB 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Kingston 99U5713-002.A00G 4GB
Kingston 99U5713-002.A00G 4GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Kingston KHX2400C14S4/8G 8GB
Kingston KHX2400C14S4/8G 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Kingston KTD3KX-MIB 8GB
Kingston KTD3KX-MIB 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Corsair CMV4GX4M1A2133C15 4GB
Corsair CMV4GX4M1A2133C15 4GB
内存RAM
Samsung M378B2873FHS-CH9 1GB
Samsung M378B2873FHS-CH9 1GB
AMD R334G1339U2S 4GB
AMD R334G1339U2S 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C15-8GVGB 8GB
G Skill Intl F4-3000C15-8GVGB 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
内存RAM