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Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs Micron Technology 16ATF2G64HZ-2G3A1 16GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
Micron Technology 16ATF2G64HZ-2G3A1 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
更快的读取速度,GB/s
2
11.5
测试中的平均数值
需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3A1 16GB
报告一个错误
低于PassMark测试中的延时,ns
39
71
左右 -82% 更低的延时
更快的写入速度,GB/s
9.1
1,322.6
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
39
读取速度,GB/s
2,831.6
11.5
写入速度,GB/s
1,322.6
9.1
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
399
1881
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M4 70T2953EZ3-CE6 1GB
Gloway International (HK) STK2133C15-8GB 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
MemxPro Inc. D4S8GHIOFFC 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
Samsung M471B5773DH0-CK0 2GB
Crucial Technology BLS8G4S26BFSDK.8FD 8GB
Protocol Engines Kingrock 800 2GB 2GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-3200C15-8GTZSW 8GB
SK Hynix HYMP512U64CP8-Y5 1GB
Crucial Technology CT8G4DFS824A.M8FE 8GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-3200C22-8GRS 8GB
Samsung M378A1K43EB2-CWE 8GB
HT Micron HTH5AN8G8NCJR-VKD 8GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB
A-DATA Technology ADOVE1A0834E 1GB
Micron Technology 8ATF1G64AZ-2G6J1 8GB
Kingston KHX2133C11D3/4GX 4GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-2400C15-16GTZRX 16GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
报告一个错误
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Bug description
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