Nanya Technology NT512T64U88B0BY-3C 512MB vs Nanya Technology NT8GA64D88CX3S-JR 8GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

Nanya Technology NT8GA64D88CX3S-JR 8GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

更快的读取速度，GB/s

2 14.2

测试中的平均数值

Nanya Technology NT8GA64D88CX3S-JR 8GB

需要考虑的原因
Nanya Technology NT8GA64D88CX3S-JR 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 71

左右 -87% 更低的延时
更快的写入速度，GB/s

9.8 1,322.6

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT8GA64D88CX3S-JR 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 38
读取速度，GB/s

2,831.6 14.2
写入速度，GB/s

1,322.6 9.8
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

399 2451

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Corsair CMU64GX4M4C3200C16 16GB

Corsair CMU64GX4M4C3200C16 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-3600C19-16GTRS 16GB

G Skill Intl F4-3600C19-16GTRS 16GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Corsair CMK8GX4M1Z3200C16 8GB

Corsair CMK8GX4M1Z3200C16 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology CT8G4DFS824A.C8FBD1 8GB

Crucial Technology CT8G4DFS824A.C8FBD1 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Patriot Memory (PDP Systems) PSD416G320081 16GB

Patriot Memory (PDP Systems) PSD416G320081 16GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Kingston 9905678-027.A00G 8GB

Kingston 9905678-027.A00G 8GB

A-DATA Technology DDR4 2400 16GB

A-DATA Technology DDR4 2400 16GB

Kingston XN205T-HYD2 16GB

Kingston XN205T-HYD2 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M393A2G40DB0-CPB 16GB

Samsung M393A2G40DB0-CPB 16GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Kingston KDK8NX-MIE 16GB

Kingston KDK8NX-MIE 16GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

G Skill Intl F4-2666C18-8GFT 8GB

G Skill Intl F4-2666C18-8GFT 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

G Skill Intl F4-2400C17-8GDBVR 8GB

G Skill Intl F4-2400C17-8GDBVR 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Kllisre D4 8G 8GB

Kllisre D4 8G 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

G Skill Intl F4-3866C18-8GTZR 8GB

G Skill Intl F4-3866C18-8GTZR 8GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

Gold Key Technology Co Ltd NMSO432F82-3200E 32GB

Gold Key Technology Co Ltd NMSO432F82-3200E 32GB