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Nanya Technology NT512T64U88B0BY-3C 512MB
Samsung M471A5143DB0-CPB 4GB

Nanya Technology NT512T64U88B0BY-3C 512MB vs Samsung M471A5143DB0-CPB 4GB

总分
star star star star star
Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分
star star star star star
Samsung M471A5143DB0-CPB 4GB

Samsung M471A5143DB0-CPB 4GB

差异 规格 评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB 需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 14.1
    测试中的平均数值
Samsung M471A5143DB0-CPB 4GB 需要考虑的原因
Samsung M471A5143DB0-CPB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 71
    左右 -82% 更低的延时
  • 更快的写入速度，GB/s
    10.7 left arrow 1,322.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Samsung M471A5143DB0-CPB 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    71 left arrow 39
  • 读取速度，GB/s
    2,831.6 left arrow 14.1
  • 写入速度，GB/s
    1,322.6 left arrow 10.7
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    399 left arrow 2183

Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB

Samsung M471A5143DB0-CPB 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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Kingston 9905744-027.A00G 16GB
内存RAM
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Corsair CMK32GX4M1A2400C16 32GB
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Patriot Memory (PDP Systems) PSD22G8002 2GB
Corsair CMW32GX4M2Z3600C18 16GB
Corsair CMW32GX4M2Z3600C18 16GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Avant Technology W641GU67J5213N8 8GB
Avant Technology W641GU67J5213N8 8GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
SK Hynix HMAA4GU6AJR8N-VK 32GB
SK Hynix HMAA4GU6AJR8N-VK 32GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
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Kingmax Semiconductor GLJG42F-D8KBFA------ 8GB
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SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Apacer Technology 78.BAGMD.AF20B 4GB
Apacer Technology 78.BAGMD.AF20B 4GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
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G Skill Intl F4-3600C19-16GSXK 16GB
内存RAM
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Corsair CMD8GX3M2A2933C12 4GB
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Kingston X75V1H-MIE 32GB
内存RAM
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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Transcend Information JM2400HLB-8G 8GB
Transcend Information JM2400HLB-8G 8GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
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Samsung M471A2K43CB1-CTCT 16GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
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Kingston HP24D4U7S8MBP-4 4GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
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Apacer Technology GD2.1542WS.001 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
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Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
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