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Nanya Technology NT512T64U88B0BY-3C 512MB
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs SanMax Technologies Inc. SMD-8G28HP-21P 8GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
更快的读取速度,GB/s
2
13.8
测试中的平均数值
需要考虑的原因
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
71
左右 -163% 更低的延时
更快的写入速度,GB/s
10.3
1,322.6
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
27
读取速度,GB/s
2,831.6
13.8
写入速度,GB/s
1,322.6
10.3
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
399
2140
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
SanMax Technologies Inc. SMD-8G28HP-21P 8GB RAM的比较
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905471-001.A01LF 2GB
Hyundai Inc AR32C16S8K2SU416R 8GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-3200C14-16GTRG 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Kingston 9905700-046.A00G 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
SanMax Technologies Inc. SMD-8G28HP-21P 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3466C16-8GTZSK 8GB
Kingston 99U5471-020.A00LF 4GB
Crucial Technology BLS8G4D26BFSB.16FE 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CMK16GX4M4B3866C18 4GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Samsung M471A5244BB0-CRC 4GB
Kingston 9965433-034.A00LF 4GB
Golden Empire CL18-20-20 D4-3000 8GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3400C16-16GVR 16GB
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
Crucial Technology CT25664BA160B.C16F 2GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Kingston MSI24D4U7S8MH-8 8GB
Samsung M471A5244CB0-CRC 4GB
SK Hynix HMA81GS6JJR8N-VK 8GB
报告一个错误
×
Bug description
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