RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Micron Technology 18ASF2G72PDZ-2G3A1 16GB
总分
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
总分
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
差异
规格
评论
差异
需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
低于PassMark测试中的延时,ns
35
41
左右 15% 更低的延时
更快的读取速度,GB/s
13.7
7.7
测试中的平均数值
更快的写入速度,GB/s
9.6
7.6
测试中的平均数值
需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
报告一个错误
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
35
41
读取速度,GB/s
13.7
7.7
写入速度,GB/s
9.6
7.6
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2312
1855
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB
Micron Technology 18ASF2G72PDZ-2G3A1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905403-090.A01LF 4GB
Kingston KHX2933C17S4/32G 32GB
Qimonda 72T128420EFA3SB2 1GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
Samsung M393B1K70CH0-YH9 8GB
Corsair MK16GX44B3000C15 4GB
takeMS International AG TMS2GB264D082-805G 2GB
Maxsun MSD48G30M3 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Corsair CMD8GX4M2B3866C18 4GB
Samsung M471B5273CH0-CH9 4GB
Kingston KTD3KX-HYA 8GB
Kingston 9905584-016.A00LF 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Samsung M3 78T2863EHS-CF7 1GB
SK Hynix HMA84GR7AFR4N-VK 32GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology CT16G4SFD824A.M16FD 16GB
Samsung M378B5773DH0-CH9 2GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
TwinMOS 8DPT5MK8-TATP 2GB
A-DATA Technology DDR4 2800 2OZ 4GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston 9905622-025.A00G 4GB
Kingston 99U5584-004.A00LF 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
报告一个错误
×
Bug description
Source link