RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Patriot Memory (PDP Systems) PSD22G8002 2GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
比较
Patriot Memory (PDP Systems) PSD22G8002 2GB vs Micron Technology 8ATF51264AZ-2G1B1 4GB
总分
Patriot Memory (PDP Systems) PSD22G8002 2GB
总分
Micron Technology 8ATF51264AZ-2G1B1 4GB
差异
规格
评论
差异
需要考虑的原因
Patriot Memory (PDP Systems) PSD22G8002 2GB
报告一个错误
更快的读取速度,GB/s
4
15.8
测试中的平均数值
更快的写入速度,GB/s
2,109.3
11.8
测试中的平均数值
需要考虑的原因
Micron Technology 8ATF51264AZ-2G1B1 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
60
左右 -107% 更低的延时
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
Patriot Memory (PDP Systems) PSD22G8002 2GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
60
29
读取速度,GB/s
4,162.7
15.8
写入速度,GB/s
2,109.3
11.8
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
784
2711
Patriot Memory (PDP Systems) PSD22G8002 2GB RAM的比较
Apacer Technology 75.A73AA.G03 2GB
Patriot Memory (PDP Systems) PSD22G80026 2GB
Micron Technology 8ATF51264AZ-2G1B1 4GB RAM的比较
Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT25664BA160B.C16F 2GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMSX8GX4M1A2666C18 8GB
Kingston 9905403-444.A00LF 4GB
Samsung M471A5244CB0-CRC 4GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMK64GX4M4B3600C18 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
Kingston 9905403-038.A00LF 4GB
Kingston ACR26D4U9S8HJ-8 8GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMD8GX4M2B3866C18 4GB
Samsung M3 78T2953EZ3-CF7 1GB
G Skill Intl F4-4000C19-8GTZ 8GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-4266C19-8GTZR 8GB
Kingston 9965525-018.A00LF 4GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology CT4G4DFS8213.C8FAR1 4GB
Corsair CM2X1024-8500C5D 1GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
报告一个错误
×
Bug description
Source link