Patriot Memory (PDP Systems) PSD34G16002 4GB vs Apacer Technology 78.CAGP7.C7Z0B 8GB

总分

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

总分

Apacer Technology 78.CAGP7.C7Z0B 8GB

Apacer Technology 78.CAGP7.C7Z0B 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD34G16002 4GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD34G16002 4GB

报告一个错误

Apacer Technology 78.CAGP7.C7Z0B 8GB

需要考虑的原因
Apacer Technology 78.CAGP7.C7Z0B 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 39

左右 -86% 更低的延时
更快的读取速度，GB/s

17.7 14.7

测试中的平均数值
更快的写入速度，GB/s

13.2 9.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD34G16002 4GB

Apacer Technology 78.CAGP7.C7Z0B 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 21
读取速度，GB/s

14.7 17.7
写入速度，GB/s

9.2 13.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2322 3029

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DDR3 1866 2OZ 4GB

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Micron Technology 16A6A2G64HZ-2-2E1 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Crucial Technology CT16G4DFD8266.C16FP 16GB

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Kingston ACR26D4U9S8ME-8 8GB

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Kingston 9905403-038.A00LF 4GB

SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB

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A-DATA Technology AD73I1C1674EV 4GB

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Crucial Technology CT16G4SFD8213.M16FA 16GB

Crucial Technology CT16G4SFD8213.M16FA 16GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

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Corsair CMSX32GX4M2A2933C19 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N