Patriot Memory (PDP Systems) PSD34G16002 4GB vs Kingston 9932301-P01.A00G 4GB

总分

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

总分

Kingston 9932301-P01.A00G 4GB

Kingston 9932301-P01.A00G 4GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD34G16002 4GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD34G16002 4GB

报告一个错误

Kingston 9932301-P01.A00G 4GB

需要考虑的原因
Kingston 9932301-P01.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

20 39

左右 -95% 更低的延时
更快的读取速度，GB/s

19.9 14.7

测试中的平均数值
更快的写入速度，GB/s

14.2 9.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston 9932301-P01.A00G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 20
读取速度，GB/s

14.7 19.9
写入速度，GB/s

9.2 14.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2322 3152

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2400C17-8GVR 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Samsung M393B1G70QH0-YK0 8GB

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Kingston XJV223-MIE-NX 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 8ATF1G64AZ-2G6D1 8GB

Micron Technology 8ATF1G64AZ-2G6D1 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Kingston KF3200C20S4/32GX 32MB

Kingston KF3200C20S4/32GX 32MB

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Samsung M471B5273DH0-CK0 4GB

AMD R748G2606U2S 8GB

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AMD R5S38G1601U2S 8GB

Corsair CMT32GX4M2K4000C19 16GB

Corsair CMT32GX4M2K4000C19 16GB