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Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-3200C16-4GRB 4GB

Peak Electronics 256X64M-67E 2GB vs G Skill Intl F4-3200C16-4GRB 4GB

总分
star star star star star
Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分
star star star star star
G Skill Intl F4-3200C16-4GRB 4GB

G Skill Intl F4-3200C16-4GRB 4GB

差异 规格 评论

差异

Peak Electronics 256X64M-67E 2GB 需要考虑的原因
Peak Electronics 256X64M-67E 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 18.6
    测试中的平均数值
G Skill Intl F4-3200C16-4GRB 4GB 需要考虑的原因
G Skill Intl F4-3200C16-4GRB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 39
    左右 -86% 更低的延时
  • 更快的写入速度，GB/s
    14.4 left arrow 1,597.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-3200C16-4GRB 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 21
  • 读取速度，GB/s
    5,022.9 left arrow 18.6
  • 写入速度，GB/s
    1,597.0 left arrow 14.4
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    753 left arrow 3077

Peak Electronics 256X64M-67E 2GB RAM的比较

A Force Manufacturing Ltd. 256X64M-67E 2GB
Kingston ACR26D4U9S8MH-8 8GB

G Skill Intl F4-3200C16-4GRB 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-3200C16-4GRB 4GB
G Skill Intl F4-3200C16-4GRB 4GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Samsung M393A4K40CB2-CTD 32GB
Samsung M393A4K40CB2-CTD 32GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Kingston 9965600-011.A01G 16GB
Kingston 9965600-011.A01G 16GB
内存RAM
Kingston KHX1600C9S3L/8G 8GB
Kingston KHX1600C9S3L/8G 8GB
Crucial Technology CT16G4DFD824A.M16FJ 16GB
Crucial Technology CT16G4DFD824A.M16FJ 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CM4B8G2J2666A15D 8GB
Corsair CM4B8G2J2666A15D 8GB
内存RAM
Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
SK Hynix HMA451U7MFR8N-TF 4GB
SK Hynix HMA451U7MFR8N-TF 4GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Transcend Information TS1GSH64V4B 8GB
Transcend Information TS1GSH64V4B 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology CB16GS2400.C16J 16GB
Crucial Technology CB16GS2400.C16J 16GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Corsair CMD16GX4M4B3200C14 4GB
Corsair CMD16GX4M4B3200C14 4GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
SK Hynix HMA851S6CJR6N-XN 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
内存RAM