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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

总分
star star star star star
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

总分
star star star star star
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

差异 规格 评论

差异

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB 需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15.4
    测试中的平均数值
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB 需要考虑的原因
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 96
    左右 -284% 更低的延时
  • 更快的写入速度，GB/s
    13.4 left arrow 1,336.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    96 left arrow 25
  • 读取速度，GB/s
    2,725.2 left arrow 15.4
  • 写入速度，GB/s
    1,336.0 left arrow 13.4
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    438 left arrow 2786

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较

takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB

Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Apacer Technology 78.CAGP7.40C0B 8GB
Apacer Technology 78.CAGP7.40C0B 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Corsair CMK8GX4M1D2400C14 8GB
Corsair CMK8GX4M1D2400C14 8GB
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Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-2400C16-8GIS 8GB
G Skill Intl F4-2400C16-8GIS 8GB
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Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Corsair CM4X16GC3000C15D4 16GB
Corsair CM4X16GC3000C15D4 16GB
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Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT16G4DFD824A.C16FBR 16GB
Crucial Technology CT16G4DFD824A.C16FBR 16GB
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Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMK32GX4M2C3000C16 16GB
Corsair CMK32GX4M2C3000C16 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
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Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
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Kingston 9905678-173.A00G 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BLM8G44C19U4BL.M8FE1 8GB
Crucial Technology BLM8G44C19U4BL.M8FE1 8GB
内存RAM
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
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Samsung M393A1G40DB1-CRC 8GB
内存RAM
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G Skill Intl F3-14900CL9-4GBSR 4GB
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Corsair CMD64GX4M8X4000C19 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
EVGA 16G-D4-2400-MR 8GB
EVGA 16G-D4-2400-MR 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Kingston K6VDX7-HYD 8GB
Kingston K6VDX7-HYD 8GB
内存RAM