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PNY Electronics PNY 2GB
Apacer Technology 78.D1GS7.B7B0B 16GB
比较
PNY Electronics PNY 2GB vs Apacer Technology 78.D1GS7.B7B0B 16GB
总分
PNY Electronics PNY 2GB
总分
Apacer Technology 78.D1GS7.B7B0B 16GB
差异
规格
评论
差异
需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
需要考虑的原因
Apacer Technology 78.D1GS7.B7B0B 16GB
报告一个错误
更快的读取速度,GB/s
17.6
13.8
测试中的平均数值
更快的写入速度,GB/s
14.4
8.4
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
PNY Electronics PNY 2GB
Apacer Technology 78.D1GS7.B7B0B 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
27
读取速度,GB/s
13.8
17.6
写入速度,GB/s
8.4
14.4
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2274
3474
PNY Electronics PNY 2GB RAM的比较
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Apacer Technology 78.D1GS7.B7B0B 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70QB0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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PNY Electronics PNY 2GB
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Crucial Technology CT4G4DFS8213.M8FB 4GB
A-DATA Technology DQVE1908 512MB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
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Corsair CMK8GX4M1A2400C14 8GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BL16G32C16U4B.M16FE1 16GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Kingston MSI24D4S7S8MB-8 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB
报告一个错误
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