RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
PNY Electronics PNY 2GB
Avant Technology W642GU42J2320NH 16GB

PNY Electronics PNY 2GB vs Avant Technology W642GU42J2320NH 16GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Avant Technology W642GU42J2320NH 16GB

Avant Technology W642GU42J2320NH 16GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 34
    左右 21% 更低的延时
Avant Technology W642GU42J2320NH 16GB 需要考虑的原因
Avant Technology W642GU42J2320NH 16GB
报告一个错误
  • 更快的读取速度，GB/s
    18.1 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.8 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Avant Technology W642GU42J2320NH 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 34
  • 读取速度，GB/s
    13.8 left arrow 18.1
  • 写入速度，GB/s
    8.4 left arrow 14.8
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 3505

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Avant Technology W642GU42J2320NH 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Wilk Elektronik S.A. IR2400D464L17/16G 16GB
Wilk Elektronik S.A. IR2400D464L17/16G 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Avant Technology W642GU42J2320NH 16GB
Avant Technology W642GU42J2320NH 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
V-Color Technology Inc. TL48G32S8KSRGB16 8GB
V-Color Technology Inc. TL48G32S8KSRGB16 8GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT8G4DFS8266.M8FE 8GB
Crucial Technology CT8G4DFS8266.M8FE 8GB
内存RAM
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Kingston KF2666C15S4/16G 16GB
Kingston KF2666C15S4/16G 16GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Essencore Limited KD48GU88C-26N190A 8GB
Essencore Limited KD48GU88C-26N190A 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston 9905701-132.A00G 16GB
Kingston 9905701-132.A00G 16GB
内存RAM
Kingston 9905428-093.A00LF 8GB
Kingston 9905428-093.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
G Skill Intl F4-2400C16-8GFX 8GB
G Skill Intl F4-2400C16-8GFX 8GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
SK Hynix HMA84GL7MMR4N-TF 32GB
SK Hynix HMA84GL7MMR4N-TF 32GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Roa Logic BV iGame DDR4 8G 3000 8GB
Roa Logic BV iGame DDR4 8G 3000 8GB
内存RAM