PNY Electronics PNY 2GB vs Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 27

左右 -23% 更低的延时
更快的读取速度，GB/s

17.3 13.8

测试中的平均数值
更快的写入速度，GB/s

13.7 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 22
读取速度，GB/s

13.8 17.3
写入速度，GB/s

8.4 13.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 3051

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3000C15-8GRRB 8GB

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Samsung M378B5773DH0-CH9 2GB

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G Skill Intl F4-3200C16-4GVRB 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Corsair CMD32GX4M4B3600C16 8GB

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Corsair CM2X1024-6400C4 1GB

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SK Hynix HYMP112U64CP8-Y5 1GB

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Samsung M386B4G70DM0-CMA4 32GB

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Team Group Inc. Dark-1866 4GB

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G Skill Intl F4-4000C17-8GVKB 8GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

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Micron Technology 8ATF1G64HZ-2G6B1 8GB

Micron Technology 8ATF1G64HZ-2G6B1 8GB