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PNY Electronics PNY 2GB
Corsair CMN16GX4M2Z3200C16 8GB

PNY Electronics PNY 2GB vs Corsair CMN16GX4M2Z3200C16 8GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Corsair CMN16GX4M2Z3200C16 8GB

Corsair CMN16GX4M2Z3200C16 8GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 31
    左右 13% 更低的延时
Corsair CMN16GX4M2Z3200C16 8GB 需要考虑的原因
Corsair CMN16GX4M2Z3200C16 8GB
报告一个错误
  • 更快的读取速度，GB/s
    20.6 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.7 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Corsair CMN16GX4M2Z3200C16 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 31
  • 读取速度，GB/s
    13.8 left arrow 20.6
  • 写入速度，GB/s
    8.4 left arrow 14.7
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 3367

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Corsair CMN16GX4M2Z3200C16 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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内存RAM
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内存RAM
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Apacer Technology 78.01G86.9H50C 1GB
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Kingston KVT8FP-HYC 4GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
内存RAM