PNY Electronics PNY 2GB vs Corsair CMW128GX4M8C3000C16 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Corsair CMW128GX4M8C3000C16 16GB

Corsair CMW128GX4M8C3000C16 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

Corsair CMW128GX4M8C3000C16 16GB

需要考虑的原因
Corsair CMW128GX4M8C3000C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 27

左右 -17% 更低的延时
更快的读取速度，GB/s

14.7 13.8

测试中的平均数值
更快的写入速度，GB/s

11.4 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Corsair CMW128GX4M8C3000C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 23
读取速度，GB/s

13.8 14.7
写入速度，GB/s

8.4 11.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 3007

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5471-020.A00LF 4GB

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Kingston KHX2933C17D4/8G 8GB

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Essencore Limited IM48GU48A32-GIISMZ 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Crucial Technology BLS8G4D26BFSEK.8FD 8GB

Crucial Technology BLS8G4D26BFSEK.8FD 8GB

Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

Kingston XWM8G1-MIE 32GB

Kingston XWM8G1-MIE 32GB