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PNY Electronics PNY 2GB
Corsair CMWX16GC3200C16W4 16GB

PNY Electronics PNY 2GB vs Corsair CMWX16GC3200C16W4 16GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Corsair CMWX16GC3200C16W4 16GB

Corsair CMWX16GC3200C16W4 16GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 31
    左右 13% 更低的延时
Corsair CMWX16GC3200C16W4 16GB 需要考虑的原因
Corsair CMWX16GC3200C16W4 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.9 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.2 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Corsair CMWX16GC3200C16W4 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 31
  • 读取速度，GB/s
    13.8 left arrow 17.9
  • 写入速度，GB/s
    8.4 left arrow 15.2
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 3755

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Corsair CMWX16GC3200C16W4 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Crucial Technology BLS8G4D240FSB.M16FAD 8GB
Crucial Technology BLS8G4D240FSB.M16FAD 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Samsung M378A2K43BB1-CRC 16GB
Samsung M378A2K43BB1-CRC 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Kingston KHX2400C14S4/8G 8GB
Kingston KHX2400C14S4/8G 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Samsung M471A5244BB0-CRC 4GB
Samsung M471A5244BB0-CRC 4GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 99U5700-032.A00G 16GB
Kingston 99U5700-032.A00G 16GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
SK Hynix HMAA2GS6CJR8N-XN 16GB
SK Hynix HMAA2GS6CJR8N-XN 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Kingston 9905630-048.A00G 16GB
Kingston 9905630-048.A00G 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avant Technology W641GU42J7240NB 8GB
Avant Technology W641GU42J7240NB 8GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Avant Technology W641GU42J7240NC 8GB
Avant Technology W641GU42J7240NC 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology BL8G30C15U4W.M8FE 8GB
Crucial Technology BL8G30C15U4W.M8FE 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Kingston KHX2666C15/16GX 16GB
Kingston KHX2666C15/16GX 16GB
内存RAM