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PNY Electronics PNY 2GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
比较
PNY Electronics PNY 2GB vs Crucial Technology BLS4G4D26BFSC.8FE 4GB
总分
PNY Electronics PNY 2GB
总分
Crucial Technology BLS4G4D26BFSC.8FE 4GB
差异
规格
评论
差异
需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
需要考虑的原因
Crucial Technology BLS4G4D26BFSC.8FE 4GB
报告一个错误
低于PassMark测试中的延时,ns
19
27
左右 -42% 更低的延时
更快的读取速度,GB/s
18.8
13.8
测试中的平均数值
更快的写入速度,GB/s
14.3
8.4
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
PNY Electronics PNY 2GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
19
读取速度,GB/s
13.8
18.8
写入速度,GB/s
8.4
14.3
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2274
2991
PNY Electronics PNY 2GB RAM的比较
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
PNY Electronics PNY 2GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston KHX3000C16/16GX 16GB
Kingston KVR533D2N4 512MB
Kingston 9905744-011.A00G 32GB
Kingston 99U5469-045.A00LF 4GB
G Skill Intl F4-3200C14-8GTZKW 8GB
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 18ADF1G72PZ-2G1A1 8GB
Kingston 99U5471-056.A00LF 8GB
Patriot Memory (PDP Systems) 4000 C19 Series 8GB
Mushkin 991586 2GB
Crucial Technology BLT4G4D26AFTA.8FBD 4GB
SK Hynix HMT425S6AFR6A-PB 2GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Kingston KHX1866C10D3/4G 4GB
G Skill Intl F4-3600C17-16GTZSW 16GB
Kingston KVR800D2N6/2G 2GB
Corsair CM4B8G4J2400A16K2-ON 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
Kingston 9905403-090.A01LF 4GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Samsung M471B1G73QH0-YK0 8GB
Panram International Corporation PUD42400C154G2NJK 4GB
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology TEAMGROUP-UD4-2400 16GB
报告一个错误
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Bug description
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