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PNY Electronics PNY 2GB
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

PNY Electronics PNY 2GB vs Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 66
    左右 59% 更低的延时
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB 需要考虑的原因
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.4 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.4 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 66
  • 读取速度，GB/s
    13.8 left arrow 16.4
  • 写入速度，GB/s
    8.4 left arrow 9.4
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 2038

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Crucial Technology BLS4G4D26BFSE.8FBR2 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB
内存RAM
Samsung M471A5143SB1-CRC 4GB
Samsung M471A5143SB1-CRC 4GB
A-DATA Technology AX4S2800316G18-B 16GB
A-DATA Technology AX4S2800316G18-B 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB
SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Team Group Inc. TEAMGROUP-Ind-2666 8GB
Team Group Inc. TEAMGROUP-Ind-2666 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Samsung M378A5244CB0-CWE 4GB
Samsung M378A5244CB0-CWE 4GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Kingston 9905678-105.A00G 8GB
Kingston 9905678-105.A00G 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Essencore Limited IM4AGU88N24-FFFHMB 16GB
Essencore Limited IM4AGU88N24-FFFHMB 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Chun Well Technology Holding Limited D4U1636144B 16GB
内存RAM
Ramaxel Technology RMT3010EC58E8F1333 2GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Corsair CMH16GX4M2Z3200C16 8GB
Corsair CMH16GX4M2Z3200C16 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9965657-011.A00G 16GB
Kingston 9965657-011.A00G 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
Gold Key Technology Co Ltd GKE160SO102408-3200 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Samsung M378A1K43CB2-CRC 8GB
Samsung M378A1K43CB2-CRC 8GB
内存RAM