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PNY Electronics PNY 2GB
Crucial Technology BLT16G4D26BFT4.C16FD 16GB

PNY Electronics PNY 2GB vs Crucial Technology BLT16G4D26BFT4.C16FD 16GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Crucial Technology BLT16G4D26BFT4.C16FD 16GB

Crucial Technology BLT16G4D26BFT4.C16FD 16GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 40
    左右 33% 更低的延时
Crucial Technology BLT16G4D26BFT4.C16FD 16GB 需要考虑的原因
Crucial Technology BLT16G4D26BFT4.C16FD 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.4 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.7 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Crucial Technology BLT16G4D26BFT4.C16FD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 40
  • 读取速度，GB/s
    13.8 left arrow 15.4
  • 写入速度，GB/s
    8.4 left arrow 12.7
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 2981

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Crucial Technology BLT16G4D26BFT4.C16FD 16GB RAM的比较

Kingston 9905403-156.A00LF 2GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology BLT16G4D26BFT4.C16FD 16GB
Crucial Technology BLT16G4D26BFT4.C16FD 16GB
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Lexar Co Limited LD4AU016G-H3200GST 16GB
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内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
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Samsung M471B5173QH0-YK0 4GB
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内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
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SK Hynix HMA82GS6DJR8N-XN 16GB
SK Hynix HMA82GS6DJR8N-XN 16GB
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Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
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A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
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A-DATA Technology AD4S3200316G22-BHYD 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
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Ramaxel Technology RMN1740HC48D8F667A 2GB
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Essencore Limited KD48GU880-32A160T 8GB
内存RAM
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内存RAM
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Mushkin MRA4S320GJJM16G 16GB
内存RAM
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Samsung M393B1K70CH0-CH9 8GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
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G Skill Intl F4-2400C17-4GNT 4GB
内存RAM
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Kingston 99U5584-017.A00LF 4GB
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JUHOR JHD2666U1908JG 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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Corsair CMW64GX4M8C3466C16 8GB
内存RAM