PNY Electronics PNY 2GB vs Crucial Technology CT16G4SFD8266.C8FBD1 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8266.C8FBD1 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 27

左右 -23% 更低的延时
更快的读取速度，GB/s

18 13.8

测试中的平均数值
更快的写入速度，GB/s

14.3 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 22
读取速度，GB/s

13.8 18.0
写入速度，GB/s

8.4 14.3
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2274 3430

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics PNY 2GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-2666C18-8GFX 8GB

Crucial Technology CT8G4DFS824A.M8FE 8GB

Crucial Technology CT8G4DFS824A.M8FE 8GB

Crucial Technology CT8G4DFS824A.C8FE 8GB

Crucial Technology CT8G4DFS824A.C8FE 8GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Kingston KHX2933C17D4/16G 16GB

Kingston KHX2933C17D4/16G 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-4266C16-8GTZR 8GB

G Skill Intl F4-4266C16-8GTZR 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-3600C17-8GTRG 8GB

G Skill Intl F4-3600C17-8GTRG 8GB