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PNY Electronics PNY 2GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
比较
PNY Electronics PNY 2GB vs Crucial Technology CT32G4SFD832A.M16FF 32GB
总分
PNY Electronics PNY 2GB
总分
Crucial Technology CT32G4SFD832A.M16FF 32GB
差异
规格
评论
差异
需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
51
左右 47% 更低的延时
需要考虑的原因
Crucial Technology CT32G4SFD832A.M16FF 32GB
报告一个错误
更快的读取速度,GB/s
16.3
13.8
测试中的平均数值
更快的写入速度,GB/s
14.7
8.4
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
PNY Electronics PNY 2GB
Crucial Technology CT32G4SFD832A.M16FF 32GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
51
读取速度,GB/s
13.8
16.3
写入速度,GB/s
8.4
14.7
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2274
2874
PNY Electronics PNY 2GB RAM的比较
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Crucial Technology CT32G4SFD832A.M16FF 32GB RAM的比较
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M471A1K43DB1-CTD 8GB
SK Hynix GKE800SO102408-2400 8GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
Corsair CMD8GX3M2A2800C12 4GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
AMD R5316G1609U2K 8GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
Samsung M3 78T5663RZ3-CE6 2GB
G Skill Intl F4-3000C15-8GRRB 8GB
Nanya Technology NT2GC64B8HC0NS-CG 2GB
SK Hynix HMA451U6MFR8N-TF 4GB
Kingston 9905471-002.A00LF 2GB
SK Hynix HMA82GU6AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Crucial Technology CT16G4SFD824A.C16FHD 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Wilk Elektronik S.A. IRH2400D464L17S/8G 8GB
报告一个错误
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Bug description
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