PNY Electronics PNY 2GB vs G Skill Intl F4-3000C14-16GTZR 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

G Skill Intl F4-3000C14-16GTZR 16GB

G Skill Intl F4-3000C14-16GTZR 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 39

左右 31% 更低的延时

G Skill Intl F4-3000C14-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-3000C14-16GTZR 16GB

报告一个错误

更快的读取速度，GB/s

14.9 13.8

测试中的平均数值
更快的写入速度，GB/s

15.0 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

G Skill Intl F4-3000C14-16GTZR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 39
读取速度，GB/s

13.8 14.9
写入速度，GB/s

8.4 15.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 3233

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 99U5429-014.A00LF 4GB

Kingston 99U5429-014.A00LF 4GB

Kingston 9905643-009.A00G 8GB

Kingston 9905643-009.A00G 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-3000C14-16GTZR 16GB

G Skill Intl F4-3000C14-16GTZR 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Crucial Technology BLS8G4D32AESCK.M8FE 8GB

Crucial Technology BLS8G4D32AESCK.M8FE 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Crucial Technology BL16G32C16U4W.16FE 16GB

Crucial Technology BL16G32C16U4W.16FE 16GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

SK Hynix HMA82GU6MFR8N-TF 16GB

SK Hynix HMA82GU6MFR8N-TF 16GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Samsung M471A2K43CB1-CTCT 16GB

Samsung M471A2K43CB1-CTCT 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Essencore Limited IM48GU88A30-FGGHMB 8GB

Essencore Limited IM48GU88A30-FGGHMB 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Asgard VMA41UF-MEC1U2BQ2 4GB

Asgard VMA41UF-MEC1U2BQ2 4GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Panram International Corporation W4U2400PS-4G 4GB

Panram International Corporation W4U2400PS-4G 4GB

Apacer Technology 75.A73AA.G03 2GB

Apacer Technology 75.A73AA.G03 2GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB