PNY Electronics PNY 2GB vs G Skill Intl F4-3200C16-8GTZR 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

G Skill Intl F4-3200C16-8GTZR 8GB

G Skill Intl F4-3200C16-8GTZR 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时

G Skill Intl F4-3200C16-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GTZR 8GB

报告一个错误

更快的读取速度，GB/s

18.2 13.8

测试中的平均数值
更快的写入速度，GB/s

14.6 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

G Skill Intl F4-3200C16-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

13.8 18.2
写入速度，GB/s

8.4 14.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 3546

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-3200C16-8GTZR 8GB

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Samsung M3 78T5663EH3-CF7 2GB

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Samsung M471A1G44AB0-CWE 8GB

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Kingston SNY1600S11-4G-EDEG 4GB

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Samsung M391A1K43BB2-CTD 8GB

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Corsair CMT32GX5M2B5600C36 16GB

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AMD R5316G1609U2K 8GB

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Samsung M378B5673FH0-CH9 2GB

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Kingston HP32D4U8S8ME-8X 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Corsair CMK16GX4M4B3000C15 4GB

Corsair CMK16GX4M4B3000C15 4GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CMK16GX4M4A2133C15 4GB

Corsair CMK16GX4M4A2133C15 4GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

G Skill Intl F4-3000C14-16GVR 16GB

G Skill Intl F4-3000C14-16GVR 16GB