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PNY Electronics PNY 2GB
Golden Empire CL19-25-25 D4-4000 4GB

PNY Electronics PNY 2GB vs Golden Empire CL19-25-25 D4-4000 4GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Golden Empire CL19-25-25 D4-4000 4GB

Golden Empire CL19-25-25 D4-4000 4GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
Golden Empire CL19-25-25 D4-4000 4GB 需要考虑的原因
Golden Empire CL19-25-25 D4-4000 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 27
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    17.5 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Golden Empire CL19-25-25 D4-4000 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 23
  • 读取速度，GB/s
    13.8 left arrow 17.5
  • 写入速度，GB/s
    8.4 left arrow 12.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 3037

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Golden Empire CL19-25-25 D4-4000 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Corsair CMU32GX4M2D3200C16 16GB
Corsair CMU32GX4M2D3200C16 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Apacer Technology 78.C2GFL.C720B 8GB
Apacer Technology 78.C2GFL.C720B 8GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
G Skill Intl F4-2133C15-16GIS 16GB
G Skill Intl F4-2133C15-16GIS 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
A-DATA Technology AO1P32NCSV1-BDBS 16GB
A-DATA Technology AO1P32NCSV1-BDBS 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CT8G4SFS824A.M8FA 8GB
Crucial Technology CT8G4SFS824A.M8FA 8GB
内存RAM
Corsair CML8GX3M2A1866C9 4GB
Corsair CML8GX3M2A1866C9 4GB
Crucial Technology BLS8G4D240FSB.M16FAD 8GB
Crucial Technology BLS8G4D240FSB.M16FAD 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Essencore Limited KD48GU881-26N190D 8GB
Essencore Limited KD48GU881-26N190D 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
G Skill Intl F4-2400C17-4GVR 4GB
G Skill Intl F4-2400C17-4GVR 4GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMK16GX4M2Z3466C16 8GB
Corsair CMK16GX4M2Z3466C16 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Corsair CMK16GX4M2F4500C19 8GB
Corsair CMK16GX4M2F4500C19 8GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
Crucial Technology CT8G4SFS832A.C8FP 8GB
Crucial Technology CT8G4SFS832A.C8FP 8GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
SK Hynix HMA451R7AFR8N-UH 4GB
SK Hynix HMA451R7AFR8N-UH 4GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston HX421C14FB/4 4GB
Kingston HX421C14FB/4 4GB
内存RAM