PNY Electronics PNY 2GB vs Kingston 9965596-029.B00G 4GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Kingston 9965596-029.B00G 4GB

Kingston 9965596-029.B00G 4GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 23% 更低的延时
更快的读取速度，GB/s

13.8 9.6

测试中的平均数值
更快的写入速度，GB/s

8.4 7.3

测试中的平均数值

Kingston 9965596-029.B00G 4GB

需要考虑的原因
Kingston 9965596-029.B00G 4GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Kingston 9965596-029.B00G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 35
读取速度，GB/s

13.8 9.6
写入速度，GB/s

8.4 7.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 2211

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Kingston 9965596-029.B00G 4GB

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Apacer Technology 78.01G86.9H50C 1GB

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Maxsun MSD44G24Q3 4GB

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Micron Technology 9ASF1G72PZ-2G9E1 8GB

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NSITEXE Inc Visenta 16GB

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G Skill Intl F4-3200C16-32GVK 32GB

G Skill Intl F3-10600CL9-2GBNT 2GB

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A-DATA Technology VDQVE1B16 2GB

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Shenzhen Technology Co Ltd 8GB

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