PNY Electronics PNY 2GB vs Kingston KHX4133C19D4/8GX 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Kingston KHX4133C19D4/8GX 8GB

Kingston KHX4133C19D4/8GX 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

Kingston KHX4133C19D4/8GX 8GB

需要考虑的原因
Kingston KHX4133C19D4/8GX 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 27

左右 -17% 更低的延时
更快的读取速度，GB/s

19.7 13.8

测试中的平均数值
更快的写入速度，GB/s

18.2 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Kingston KHX4133C19D4/8GX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 23
读取速度，GB/s

13.8 19.7
写入速度，GB/s

8.4 18.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2274 4001

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics PNY 2GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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Apacer Technology 76.D105G.D090B 16GB

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Kingston 99U5584-005.A00LF 4GB

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Essencore Limited IM48GU88N24-FFFHMB 8GB

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Corsair CMD16GX4M4A2666C15 4GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Panram International Corporation D4U2666P-8G 8GB

Panram International Corporation D4U2666P-8G 8GB

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Samsung M471B5173EB0-YK0 4GB

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Crucial Technology BL16G36C16U4BL.M8FB1 16GB

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SK Hynix HMT351U6CFR8C-H9 4GB

Crucial Technology CT4G4DFS8266.C8FE 4GB

Crucial Technology CT4G4DFS8266.C8FE 4GB