PNY Electronics PNY 2GB vs Micron Technology 16ATF2G64HZ-2G3E2 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Micron Technology 16ATF2G64HZ-2G3E2 16GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

Micron Technology 16ATF2G64HZ-2G3E2 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3E2 16GB

报告一个错误

更快的读取速度，GB/s

16.5 13.8

测试中的平均数值
更快的写入速度，GB/s

13.6 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 27
读取速度，GB/s

13.8 16.5
写入速度，GB/s

8.4 13.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2274 2892

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4SFD8213.C16FBD2 8GB

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Kingston KH280C14D4/8X 8GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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Team Group Inc. TEAMGROUP-SD4-3200 16GB

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Kingston KHX2133C11D3/4GX 4GB

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Kingston KHX1600C9S3L/4G 4GB

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Hewlett-Packard 7EH64AA# 8GB

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Kingston 99U5428-063.A00LF 8GB

Apacer Technology 78.C1GMM.AUC0B 8GB

Apacer Technology 78.C1GMM.AUC0B 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

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A-DATA Technology AO2P24HC8T1-BTBS 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Corsair CMK64GX4M4B3466C16 16GB

Corsair CMK64GX4M4B3466C16 16GB