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PNY Electronics PNY 2GB
Micron Technology 16G3200CL22 16GB

PNY Electronics PNY 2GB vs Micron Technology 16G3200CL22 16GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Micron Technology 16G3200CL22 16GB

Micron Technology 16G3200CL22 16GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 28
    左右 4% 更低的延时
  • 更快的写入速度，GB/s
    8.4 left arrow 7.3
    测试中的平均数值
Micron Technology 16G3200CL22 16GB 需要考虑的原因
Micron Technology 16G3200CL22 16GB
报告一个错误
  • 更快的读取速度，GB/s
    14 left arrow 13.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Micron Technology 16G3200CL22 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 28
  • 读取速度，GB/s
    13.8 left arrow 14.0
  • 写入速度，GB/s
    8.4 left arrow 7.3
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 2663

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Micron Technology 16G3200CL22 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Micron Technology 16G3200CL22 16GB
Micron Technology 16G3200CL22 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CM4B8G4J2400A16K2-ON 8GB
Corsair CM4B8G4J2400A16K2-ON 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4DFS824A.C8FJ 8GB
Crucial Technology CT8G4DFS824A.C8FJ 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
InnoDisk Corporation M4S0-AGS1O5IK 16GB
InnoDisk Corporation M4S0-AGS1O5IK 16GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Corsair CMK16GX4M4C3200C15 4GB
Corsair CMK16GX4M4C3200C15 4GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
SK Hynix HMA82GS6CJR8N-UH 16GB
SK Hynix HMA82GS6CJR8N-UH 16GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BL8G32C16S4B.M8FE 8GB
Crucial Technology BL8G32C16S4B.M8FE 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Kingston CBD24D4U7S8MA-8 8GB
Kingston CBD24D4U7S8MA-8 8GB
内存RAM
Avant Technology F641GU67F9333G 8GB
Avant Technology F641GU67F9333G 8GB
G Skill Intl F4-2400C16-8GFXR 8GB
G Skill Intl F4-2400C16-8GFXR 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
SK Hynix HMA82GR7AFR4N-TF 16GB
SK Hynix HMA82GR7AFR4N-TF 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BL8G36C16U4RL.M8FE1 8GB
Crucial Technology BL8G36C16U4RL.M8FE1 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 9905701-131.A00G 16GB
Kingston 9905701-131.A00G 16GB
内存RAM