PNY Electronics PNY 2GB vs Micron Technology 36ASF2G72PZ-2G1A2 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 52

左右 48% 更低的延时
更快的读取速度，GB/s

13.8 10.2

测试中的平均数值
更快的写入速度，GB/s

8.4 8.2

测试中的平均数值

Micron Technology 36ASF2G72PZ-2G1A2 16GB

需要考虑的原因
Micron Technology 36ASF2G72PZ-2G1A2 16GB

报告一个错误

更高的内存带宽，mbps

17500 10600

左右 1.65 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 52
读取速度，GB/s

13.8 10.2
写入速度，GB/s

8.4 8.2
内存带宽，mbps

10600 17500

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17500, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz no data
排名PassMark (越多越好)

2274 2319

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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