PNY Electronics PNY 2GB vs Micron Technology ILG8GS2400A 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Micron Technology ILG8GS2400A 8GB

Micron Technology ILG8GS2400A 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

Micron Technology ILG8GS2400A 8GB

需要考虑的原因
Micron Technology ILG8GS2400A 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 -8% 更低的延时
更快的读取速度，GB/s

15 13.8

测试中的平均数值
更快的写入速度，GB/s

11.4 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Micron Technology ILG8GS2400A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 25
读取速度，GB/s

13.8 15.0
写入速度，GB/s

8.4 11.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2274 2549

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Century Micro Inc. CENTURY JAPAN MEMORY 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Kingston K821PJ-MID 16GB

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SK Hynix HYMP512S64CP8-Y5 1GB

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Kingston 99U5458-008.A00LF 4GB

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G Skill Intl F5-6400J3239G16G 16GB

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Micron Technology 4ATF51264HZ-2G3B2 4GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

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G Skill Intl F4-3600C14-8GVKA 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-2933C16-16GTZRX 16GB

G Skill Intl F4-2933C16-16GTZRX 16GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

Corsair CMV4GX4M1A2133C15 4GB

Corsair CMV4GX4M1A2133C15 4GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Kingston KHX2666C16S4/16G 16GB

Kingston KHX2666C16S4/16G 16GB