PNY Electronics PNY 2GB vs Mushkin 99[2/7/4]199[F/T] 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Mushkin 99[2/7/4]199[F/T] 8GB

Mushkin 99[2/7/4]199[F/T] 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 34

左右 21% 更低的延时

Mushkin 99[2/7/4]199[F/T] 8GB

需要考虑的原因
Mushkin 99[2/7/4]199[F/T] 8GB

报告一个错误

更快的读取速度，GB/s

15.9 13.8

测试中的平均数值
更快的写入速度，GB/s

12.2 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Mushkin 99[2/7/4]199[F/T] 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 34
读取速度，GB/s

13.8 15.9
写入速度，GB/s

8.4 12.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 2910

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A1G44AB0-CWE 8GB

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Corsair CML8GX3M2A1600C9 4GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Kingston 9905471-002.A00LF 2GB

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Transcend Information TS2GSH64V6B 16GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

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SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

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G Skill Intl F5-5600J4040C16G 16GB

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Crucial Technology CT8G4SFRA266.M16FG 8GB

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Crucial Technology CT102464BF160B.16F 8GB

G Skill Intl F4-3000C16-8GRS 8GB

G Skill Intl F4-3000C16-8GRS 8GB